Mask blanks warpage at 130-nm node

Nobuyoshi Deguchi; Kazunori Iwamoto; Izumi Tsukamoto; Ryo Takai; Mitsuru Hiura

doi:10.1117/12.438385

5 September 2001 Mask blanks warpage at 130-nm node

Nobuyoshi Deguchi, Kazunori Iwamoto, Izumi Tsukamoto, Ryo Takai, Mitsuru Hiura

Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001) https://doi.org/10.1117/12.438385
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan

Abstract

Semiconductor device technology is now making transition from 150 to 130 nm node. Lithography tools for 130 node that employ KrF and ArF as light sources have finished being developed. Also, mask drawing and inspection tools are ready. However, for actual processes, there is an issue to be solved from realistic DOF or overlay accuracy acquisition point of view.

Citation Download Citation

Nobuyoshi Deguchi, Kazunori Iwamoto, Izumi Tsukamoto, Ryo Takai, and Mitsuru Hiura "Mask blanks warpage at 130-nm node", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); https://doi.org/10.1117/12.438385

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