Mask blanks warpage at 130-nm node

Nobuyoshi Deguchi; Kazunori Iwamoto; Izumi Tsukamoto; Ryo Takai; Mitsuru Hiura

doi:10.1117/12.438385

5 September 2001 Mask blanks warpage at 130-nm node

Nobuyoshi Deguchi, Kazunori Iwamoto, Izumi Tsukamoto, Ryo Takai, Mitsuru Hiura

Author Affiliations +

Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001) https://doi.org/10.1117/12.438385
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan

Abstract

Semiconductor device technology is now making transition from 150 to 130 nm node. Lithography tools for 130 node that employ KrF and ArF as light sources have finished being developed. Also, mask drawing and inspection tools are ready. However, for actual processes, there is an issue to be solved from realistic DOF or overlay accuracy acquisition point of view.

Citation Download Citation

Nobuyoshi Deguchi, Kazunori Iwamoto, Izumi Tsukamoto, Ryo Takai, and Mitsuru Hiura "Mask blanks warpage at 130-nm node", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); https://doi.org/10.1117/12.438385

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE