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5 September 2001 Prediction of MEEF using a simple model and MEEF enhancement parameters
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Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001) https://doi.org/10.1117/12.438343
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan
Abstract
In low k1 optical-lithography generation, there is a non- linear amplification of mask critical dimension (CD) error during image transferring on a wafer. This error factor is called mask error enhancement factor (MEEF). In ArF system, it is premature to use commercialized simulation softwares and ArF resists. To evaluate the real resist system, we made a simple model that uses aerial images. Through the simulation, we calculated MEEFs for 180nm and 130nm line/space pairs in KrF resist system and compared them with experimental MEEFs to obtain the resist blur that satisfies the current experimental MEEFs. With a current KrF resist system, the resist blur is ~0.05 micrometers . In case of ArF resist system, the resist blur is a more important factor in MEEF and must be suppressed to lower than 0.05 micrometers to meet the proper process margin.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dong-Hoon Chung, Seung-Hune Yang, Hyung-Do Kim, In-Gyun Shin, Yong-Hoon Kim, Seong-Woon Choi, Woo-Sung Han, and Jung-Min Sohn "Prediction of MEEF using a simple model and MEEF enhancement parameters", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); https://doi.org/10.1117/12.438343
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