Semiconductor surface characterization by scanning probe microscopies

Michael Hietschold; Anne-D. Mueller; Falk Mueller

doi:10.1117/12.435824

10 August 2001 Semiconductor surface characterization by scanning probe microscopies

Michael Hietschold, Anne-D. Mueller, Falk Mueller

Proceedings Volume 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals; (2001) https://doi.org/10.1117/12.435824
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

Besides the well-known 3D surface topography, scanning probe methods give access to a whole world of local physical information on solid surfaces. Here, we demonstrate opportunities given by scanning tunneling spectroscopy (STS) and scanning electrical force microscopy/spectroscopy. In this paper, we compare the wide-spread UHV-STM/STS technique with ambient SEFM/SEFS. After short description of the methods, some applications to semiconductor surfaces are discussed. Possibly SEFS has a great potential for local electronic spectroscopy in near future.

Citation Download Citation

Michael Hietschold, Anne-D. Mueller, and Falk Mueller "Semiconductor surface characterization by scanning probe microscopies", Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); https://doi.org/10.1117/12.435824

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