Design and fabrication of GaSb/InGaAsSb/AlGaAsSb mid-IR photodetectors

Tadeusz T. Piotrowski; Anna Piotrowska; E. Kaminska; M. Piskorski; Ewa Papis-Polakowska; K. Golaszewska; J. Katcki; J. Ratajczak; J. Adamczewska; A. Wawro; Jozef Piotrowski; Zbigniew Orman; Jaroslaw Pawluczyk; Zenon Nowak

doi:10.1117/12.425452

17 April 2001 Design and fabrication of GaSb/InGaAsSb/AlGaAsSb mid-IR photodetectors

Tadeusz T. Piotrowski, Anna Piotrowska, E. Kaminska, M. Piskorski, Ewa Papis-Polakowska, K. Golaszewska, J. Katcki, J. Ratajczak, J. Adamczewska, A. Wawro, Jozef Piotrowski, Zbigniew Orman, Jaroslaw Pawluczyk, Zenon Nowak

Author Affiliations +

Proceedings Volume 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (2001) https://doi.org/10.1117/12.425452
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

The paper reports on the design and fabrication of LPE-grown (formula available in paper) heterojunction photodetectors operating in the 2-2.4 micrometers wavelength region. Experiments on LPE growth of high-x- content quaternaries as well as optimization of device processing has been carried out. LPE growth at Tapproximately equals 530^DEGC enabled obtaining lattice matched heterostructures with 19% indium in the active layer In (formula available in paper) and photodetectors with (lambda) _co=2.25micrometers . By increasing the temperature of epitaxial growth to 590^{DEGC In (formula available in paper)heterostructures (with 23%indium content} suitable for photodetectors with (lambda) _co=2.35 micrometers have been obtained. Mesa-type photodiodes were fabricated by RIE in Ccl (formula available in paper) plasma and passivated electrochemically in (formula available in paper). These devices are characterized by differential resistance up to (formula available in paper) and the detectivity in the range (formula available in paper), in dependence on the photodiode active area cutoff wavelength.

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Tadeusz T. Piotrowski, Anna Piotrowska, E. Kaminska, M. Piskorski, Ewa Papis-Polakowska, K. Golaszewska, J. Katcki, J. Ratajczak, J. Adamczewska, A. Wawro, Jozef Piotrowski, Zbigniew Orman, Jaroslaw Pawluczyk, and Zenon Nowak "Design and fabrication of GaSb/InGaAsSb/AlGaAsSb mid-IR photodetectors", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425452

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