Electrical and optical properties of m-terphenyl thin films

S. W. Tkaczyk

doi:10.1117/12.425436

17 April 2001 Electrical and optical properties of m-terphenyl thin films

S. W. Tkaczyk

Proceedings Volume 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (2001) https://doi.org/10.1117/12.425436
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

In this work the results of m-terphenyl polycrystalline thin films investigations are presented. The main purpose of the investigations was to determine the mechanism of DC conductivity in the disordered m-terphenyl polycrystalline structures. The measurements were carried out for the thin films of m-terphenyl of the thickness varied from 2 to 13 micrometers with the presence of an external electrical field, which strength varied from 0 to 10⁶ V/cm. Applied temperature range was 15-325K. The investigated m-terphenyl thin films were supplied with either the gold and Aluminum or the gold and carbon electrodes. The determined values of activation energy were found to be in the range of kT to 0.2 eV. The study let us determine the influence of an external electric field on the height of the potential barriers between the trapped charge carriers. The results obtained as well as their analysis drive to a conclusion that an injection of an electric charge from the electrodes into the investigated material's bulk takes place through the thermoemission and field emission processes.

Citation Download Citation

S. W. Tkaczyk "Electrical and optical properties of m-terphenyl thin films", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425436

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