Photoelectric characteristics of PtSi-Si Schottky barrier with heavily boron-doped nanolayer

Aleksander V. Voitsekhovskii; Andrej P. Kokhanenko; Aleksander G. Korotaev; Sergey N. Nesmelov

doi:10.1117/12.425461

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17 April 2001 Photoelectric characteristics of PtSi-Si Schottky barrier with heavily boron-doped nanolayer

Aleksander V. Voitsekhovskii, Andrej P. Kokhanenko, Aleksander G. Korotaev, Sergey N. Nesmelov

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Proceedings Volume 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (2001) https://doi.org/10.1117/12.425461
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

The photo electric characteristics of Schottky barriers, created by recoil implantation in silicon, are analyzed. Implantation of boron atoms in silicon samples was made by recoil method, inducing Al ion beams bombardment, with current density 4-10 A/cm² and 30-150keV energy. A SIMS analysis of obtained structures and calculation of their electric parameters show the opportunity of conducting layers formation, with a thickness of 10 nm and carrier concentration higher than 10¹⁸ cm^-3.

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Aleksander V. Voitsekhovskii, Andrej P. Kokhanenko, Aleksander G. Korotaev, and Sergey N. Nesmelov "Photoelectric characteristics of PtSi-Si Schottky barrier with heavily boron-doped nanolayer", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425461

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