Deep reactive ion etching of silica for planar lightwave circuits using indigenously developed ECR/RIE system

J. P. Pachauri; Aji Baby; N. Chaturvedi; Harshad S. Kothari; Awatar Singh; Babu Ram Singh; P. N. Dixit; R. Bhattacharya

doi:10.1117/12.441305

25 September 2001 Deep reactive ion etching of silica for planar lightwave circuits using indigenously developed ECR/RIE system

J. P. Pachauri, Aji Baby, N. Chaturvedi, Harshad S. Kothari, Awatar Singh, Babu Ram Singh, P. N. Dixit, R. Bhattacharya

Author Affiliations +

Proceedings Volume 4417, Photonics 2000: International Conference on Fiber Optics and Photonics; (2001) https://doi.org/10.1117/12.441305
Event: Photonics 2000: International Conference on Fiber Optics and Photonics, 2001, Calcutta, India

Abstract

Deep dry etching of silica is used for patterning of waveguides for optoelectronic applications. We report on the use of Electron Cyclotron Resonance/Reactive Ion Etching process for deep reactive ion etching of silica glass films using different fluorocarbons as etch gases. 1 by 8 splitter has been used as test structure for the optimization of the etch process. The optimized process parameters like RF/Microwave power, pressure and gas composition etc. for the above have been presented.

Citation Download Citation

J. P. Pachauri, Aji Baby, N. Chaturvedi, Harshad S. Kothari, Awatar Singh, Babu Ram Singh, P. N. Dixit, and R. Bhattacharya "Deep reactive ion etching of silica for planar lightwave circuits using indigenously developed ECR/RIE system", Proc. SPIE 4417, Photonics 2000: International Conference on Fiber Optics and Photonics, (25 September 2001); https://doi.org/10.1117/12.441305

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