Paper
25 September 2001 Infrared intersubband emission in quantum nanostructures: recent trends and studies on Si-based structures
P. K. Basu, Sumitra Ghosh, Bratati Mukhopadhyay
Author Affiliations +
Proceedings Volume 4417, Photonics 2000: International Conference on Fiber Optics and Photonics; (2001) https://doi.org/10.1117/12.441324
Event: Photonics 2000: International Conference on Fiber Optics and Photonics, 2001, Calcutta, India
Abstract
There is a need to develop reliable, low cost and efficient semiconductor sources at mid and far IR. The sources at mid- IR using II-VI and Iv-Vi compounds suffer from some limitations. There are proposals to develop THz emitters using novel concepts, but their practical realization is not imminent at present. Quantum Cascade Lasers based on intersubband transitions in coupled Quantum Wells and Superlattices have recently been the subject of intensive research. In this paper the basic mechanisms of these lasers using III-V compound based type I and II structures are mentioned and some recent results are mentioned. The possibility of obtaining population inversion in Si based QWs is then explored. The calculated values of transparency current density and gain in coupled triple QW structures using Si and SiGe are reported.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. K. Basu, Sumitra Ghosh, and Bratati Mukhopadhyay "Infrared intersubband emission in quantum nanostructures: recent trends and studies on Si-based structures", Proc. SPIE 4417, Photonics 2000: International Conference on Fiber Optics and Photonics, (25 September 2001); https://doi.org/10.1117/12.441324
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KEYWORDS
Quantum wells

Silicon

Electrons

Quantum cascade lasers

Transparency

Scattering

Phonons

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