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25 September 2001 Pushing reliability limits in SiO2: an extension to gate oxide scaling
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Proceedings Volume 4417, Photonics 2000: International Conference on Fiber Optics and Photonics; (2001) https://doi.org/10.1117/12.441290
Event: Photonics 2000: International Conference on Fiber Optics and Photonics, 2001, Calcutta, India
Abstract
Graded-Grown-Gate oxide involves a 2-step synthesis of growing an oxide at a temperature above the viscoelastic temperature onto a pre-grown SiO2 layer. The cooling rate is carefully modulated near Tve-925 degrees C to enhance growth induced stress relaxation. This new ultra- thin gate oxide process is manufacturable and delivers significant improvement in transistor performance and exceptional reliability. These improvements are a consequence of a planar and stress-free Si/SiO2 generated by this novel process.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pradip K. Roy, Y. Chen, and Sundar Chetlur "Pushing reliability limits in SiO2: an extension to gate oxide scaling", Proc. SPIE 4417, Photonics 2000: International Conference on Fiber Optics and Photonics, (25 September 2001); https://doi.org/10.1117/12.441290
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