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14 August 2001 Optoelectronic design of an infrared detector
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Proceedings Volume 4419, 4th Iberoamerican Meeting on Optics and 7th Latin American Meeting on Optics, Lasers, and Their Applications; (2001) https://doi.org/10.1117/12.437141
Event: IV Iberoamerican Meeting of Optics and the VII Latin American Meeting of Optics, Lasers and Their Applications, 2001, Tandil, Argentina
Abstract
In this work we present some results obtained on the design and fabrication of Schottky barrier photodetector. The derive is suitable for operation in the IR zone of the electromagnetic spectrum. This device is fabricated by using a Silicon-Germanium amorphous alloy on p-type crystalline silicon. The device operates in the range 1.0-4.5 micrometers . Also we present some optical design for applications in the device operation range wavelength.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Arllene Mariana Perez, Rubi Salazar, Alfonso Torres, and Francisco Renero "Optoelectronic design of an infrared detector", Proc. SPIE 4419, 4th Iberoamerican Meeting on Optics and 7th Latin American Meeting on Optics, Lasers, and Their Applications, (14 August 2001); https://doi.org/10.1117/12.437141
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