Investigations of interatomic interaction in InAs-InAs1-xSbx heterostructures on a base of x-ray diffractometry

T. I. Babjuck; A. G. Buntar; L. S. Shevtchuk

doi:10.1117/12.429743

12 June 2001 Investigations of interatomic interaction in InAs-InAs_1-xSb_x heterostructures on a base of x-ray diffractometry

T. I. Babjuck, A. G. Buntar, L. S. Shevtchuk

Author Affiliations +

Proceedings Volume 4425, Selected Papers from the International Conference on Optoelectronic Information Technologies; (2001) https://doi.org/10.1117/12.429743
Event: International Conference on Optoelectronic Information Technologies, 2000, Vinnytsia, Ukraine

Abstract

Hetero-transitions on a base of InAs and AnSb compounds permitted to obtain cheap light diodes and detectors with the atmosphere maximal transparency region sensibility. There is assumed simultaneously, that the phon radiation in InAs-InAs_1-xSb_x is not large, which positively effects on receiver parameters. Changing the composition of InAs-InAs_{1- x}Sb_x solution, one may obtain the structure with the width of forbidden zone of the want of 0.35 to 0,1 eV. There is developed the heterostructures crystalline lattice parameters determining method (for substrate and film) with the DRON-3M x-ray diffractometer. There was found the nonlinear dependence of the heterostructures lattice parameter on the composition. Investigations of interatomic interaction in dependence on composition and also on the forbidden zone width Eg(x) have show, that solid solutions InAs-InAs_{1- x}Sb_x may be used for the obtaining of infra-red receiver.

Citation Download Citation

T. I. Babjuck, A. G. Buntar, and L. S. Shevtchuk "Investigations of interatomic interaction in InAs-InAs_1-xSb_x heterostructures on a base of x-ray diffractometry", Proc. SPIE 4425, Selected Papers from the International Conference on Optoelectronic Information Technologies, (12 June 2001); https://doi.org/10.1117/12.429743

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