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25 February 2002 Laser ablation of Si in water and ambient air
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Proceedings Volume 4426, Second International Symposium on Laser Precision Microfabrication; (2002) https://doi.org/10.1117/12.456836
Event: Second International Symposium on Laser Precision Micromachining, 2001, Singapore, Singapore
Abstract
Laser ablation of Si in ambient air and under water is investigated. It is found that the laser ablation rate of Si varies with the thickness of the water layer above the Si substrates. The laser ablation rate is the most highly enhanced with the water layer of 1.1 mm. It is assumed that the plasma generated in water confinement regime (WCR) with an optimal water layer thickness induces the strongest pressure. This high-pressure, high-temperature plasma results in the high ablation rate. It is found that the first peak-to-peak amplitude of the acoustic wave is the strongest when the water layer thickness is 1.1 mm above the substrate. By proper calibration, acoustic wave detection can be used as a real-time monitoring of the laser ablation.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sha Zhu, Minghui Hong, M. L. Koh, and Yongfeng Lu "Laser ablation of Si in water and ambient air", Proc. SPIE 4426, Second International Symposium on Laser Precision Microfabrication, (25 February 2002); https://doi.org/10.1117/12.456836
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