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9 December 1983 HnCdTe Charge Transfer Device Focal Planes
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Abstract
Metal-Insulator-Semiconductor (MIS) detectors fabricated in HgCdTe offer significant advantages for focal plane applications. These detectors perform noise free signal intearation directly in the HoCdTe, can be formed in either n- or p-type material, do not require formation of a metallurgical junction, and are easy to interface to low power signal processing integrated circuits in silicon. Furthermore, this device technology readily facilitates the formation of charge transfer devices which perform some signal processing in the HaCdTe prior to transfer of the signal to the silicon processor.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Grady Roberts "HnCdTe Charge Transfer Device Focal Planes", Proc. SPIE 0443, Infrared Detectors, (9 December 1983); https://doi.org/10.1117/12.937944
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