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5 December 2001 White light-emitting diodes with phase-separated InGaN active layers
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Abstract
We fabricated the white light-emitting diodes without phosphor materials using phase-separated InGaN active layers. The white luminescence was attributed to the broad distributions of indium composition and size of quantum dot- like In-rich regions in the phase-separated InGaN Ternary alloys.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yong-Tae Moon, Dong-Joon Kim, Jin-Sub Park, Jeong-Tak Oh, Nae-Man Park, Tae-Soo Kim, and Seong-Ju Park "White light-emitting diodes with phase-separated InGaN active layers", Proc. SPIE 4445, Solid State Lighting and Displays, (5 December 2001); https://doi.org/10.1117/12.450028
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