Mueller matrix measurements of small spherical particles deposited on c-Si wafer

Bernard Kaplan; Bernard Drevillon

doi:10.1117/12.446731

23 October 2001 Mueller matrix measurements of small spherical particles deposited on c-Si wafer

Bernard Kaplan, Bernard Drevillon

Proceedings Volume 4447, Surface Scattering and Diffraction for Advanced Metrology; (2001) https://doi.org/10.1117/12.446731
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

Mueller matrix ellipsometry measurements are performed on accurately sizes polystyrene latex (PSL) and silicon oxide (SiO₂) spherical particles deposited on a crystalline silicon surface. The mean particle diameter ranges from 0.2 μm to 1.5 μm. An argon laser beam (wavelength 515 nm) is impinging on the sample at a fixed near grazing incidence angle. The Mueller matrix of the diffuse light scattered by the particles is measured in the plane of incidence as a function of the scattering angle. Results are presented and compared with exact theory.

Citation Download Citation

Bernard Kaplan and Bernard Drevillon "Mueller matrix measurements of small spherical particles deposited on c-Si wafer", Proc. SPIE 4447, Surface Scattering and Diffraction for Advanced Metrology, (23 October 2001); https://doi.org/10.1117/12.446731

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