Infrared spectroscopic ellipsometry for nondestructive characterization of free-carrier and crystal-structure properties of group-III-nitride semiconductor device heterostructures

Mathias Schubert; Alexander Kasic; Stephan Figge; Marc Diesselberg; Sven Einfeldt; Detlef Hommel; Ulrich Koehler; Donat Josef As; Juergen Off; Bertram Kuhn; Ferdinand Scholz; John A. Woollam; Craig M. Herzinger

doi:10.1117/12.450109

10 December 2001 Infrared spectroscopic ellipsometry for nondestructive characterization of free-carrier and crystal-structure properties of group-III-nitride semiconductor device heterostructures

Mathias Schubert, Alexander Kasic, Stephan Figge, Marc Diesselberg, Sven Einfeldt, Detlef Hommel, Ulrich Koehler, Donat Josef As, Juergen Off, Bertram Kuhn, Ferdinand Scholz, John A. Woollam, Craig M. Herzinger

Author Affiliations +

Proceedings Volume 4449, Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries II; (2001) https://doi.org/10.1117/12.450109
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

Infrared Spectroscopic Ellipsometry is presented as a feasible and novel technique for contactless and nondestructive measurement of free-carrier and crystal-structure properties in the characterization of complex semiconductor heterostructures for device applications. Infrared-active lattice modes and coupling of free-carrier plasmons to longitudinal-optical lattice phonon modes strongly affect the infrared-optical response of semiconductor materials. Analysis of ellipsometry data from 2 micrometers to 100 micrometers can provide precise information on phonon mode frequencies and broadening parameters, static dielectric constants, free-carrier concentration, and free-carrier mobility at optical frequencies of III-V compound semiconductors, even for films with thicknesses only a fraction of the probing wavelengths. Alloy composition, strain, crystal quality, and free-carrier properties of constituent layers in thin-film structures, designed for optoelectronic or electronic device applications, can be derived. We demonstrate the characterization of coherent and incoherent light emitter structures based on group-III-nitride materials, where information such as concentration and mobility of free carriers in n- and p-type regions, thickness, composition, and quality of device constituents are accessible.

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Mathias Schubert, Alexander Kasic, Stephan Figge, Marc Diesselberg, Sven Einfeldt, Detlef Hommel, Ulrich Koehler, Donat Josef As, Juergen Off, Bertram Kuhn, Ferdinand Scholz, John A. Woollam, and Craig M. Herzinger "Infrared spectroscopic ellipsometry for nondestructive characterization of free-carrier and crystal-structure properties of group-III-nitride semiconductor device heterostructures", Proc. SPIE 4449, Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries II, (10 December 2001); https://doi.org/10.1117/12.450109

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