Scanning electron and atomic force microscopy measurements of ion beam etched InP samples using Ar/H2 chemistry

Bulent Cakmak; Richard V. Penty; Ian H. White

doi:10.1117/12.453629

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27 December 2001 Scanning electron and atomic force microscopy measurements of ion beam etched InP samples using Ar/H₂ chemistry

Bulent Cakmak, Richard V. Penty, Ian H. White

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Proceedings Volume 4451, Optical Manufacturing and Testing IV; (2001) https://doi.org/10.1117/12.453629
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

This paper reports scanning electron (SEM) and atomic force microscopy (AFM) results of ion beam (IBE) and chemically assisted ion-beam etched (CAIBE) InP wafers. While Argon (Ar) alone is used for the IBE process, the CAIBE is carried out by using Ar/H₂/CH₄ or Ar/H₂ gases only. The evolution of the surface roughness and morphology is presented comparatively by varying acceleration voltage (V_acc), discharge current (I_dis) and ion incidence angle. A drastic improvement of the surface roughness is obtained for the CAIBE using Ar/H₂ chemistry and verified by atomic force microscopy measurements. The anisotropy of InP samples is also presented for two different masks; Al₂O₃ and Titanium (Ti) in the case of CAIBE mode. The most anisotropic structure of 83 degrees is performed by using the Ti mask. Finally, by using atomic force microscopy technique the lowest rms roughness of 4.3 is found in the case of using only Ar/H₂ gasses.

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Bulent Cakmak, Richard V. Penty, and Ian H. White "Scanning electron and atomic force microscopy measurements of ion beam etched InP samples using Ar/H₂ chemistry", Proc. SPIE 4451, Optical Manufacturing and Testing IV, (27 December 2001); https://doi.org/10.1117/12.453629

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