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6 November 2001 GaN-based acousto-optic devices for blue optoelectronics
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Wide energy gap and strong piezoelectric effects in A1GaN-based materials are very attractive for the development of visible-ultraviolet spectral range optoelectronic devices, such as optical waveguides and light modulators. In this paper, we report on the experimental studies ofthe acousto-optical diffraction in GaN-based layered structures grown by low-pressure MOCVD over sapphire substrates. We present the extracted values of the acoustooptic figures of merit and effective photoelastic constants for red (633 nm) and blue (442 nm) wavelengths. Our results demonstrate the potential of GaN-based structures for the development ofblue-ultraviolet acousto-optical devices.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daumantas Ciplys, Remis Gaska, Michael S. Shur, Romualdas Rimeika, Jinwei Yang, and Mohamed Asif Khan "GaN-based acousto-optic devices for blue optoelectronics", Proc. SPIE 4453, Materials and Devices for Photonic Circuits II, (6 November 2001);

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