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12 November 2001 Advances in large-area Hg1-xCdxTe photovoltaic detectors for remote sensing applications
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Abstract
State-of-the-art large area photovoltaic detectors fabricated in HgCdTe grown by Molecular Beam Epitaxy have been demonstrated for the Crosstrack Infrared Sounder instrument. Large area devices (1 mm in diameter) yielded excellent electrical and optical performance operating at 81K for LWIR band and at 98K for MW and SWIR bands. LWIR and MWIR detectors have near-theoretical electrical performance, and AR-coated quantum efficiency is greater than 0.70. Measured average RoA at 98K is 2.0E7 W-cm2 and near-theoretical quantum efficiencies greater than 0.90 were obtained on SWIR detectors. These state-of-the-art large area photovoltaic detector results reflect high quality HgCdTe grown by Molecular Beam Epitaxy on CdZnTe substrates in all three spectral bands of interest.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Priyalal S. Wijewarnasuriya, Majid Zandian, Jamie D. Phillips, Dennis E. Edwall, Roger E. DeWames, Gernot Hildebrandt, Jagmohan Bajaj, Jose M. Arias, Arvind I. D'Souza, and Fergus E. Moore "Advances in large-area Hg1-xCdxTe photovoltaic detectors for remote sensing applications", Proc. SPIE 4454, Materials for Infrared Detectors, (12 November 2001); https://doi.org/10.1117/12.448180
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