Translator Disclaimer
Paper
12 November 2001 High-temperature HgCdTe/CdTe/Si infrared photon detectors by MBE
Author Affiliations +
Abstract
The advantages of mercury cadmium telluride for 'HOT' IR detector applications are discussed. Molecular beam epitaxy (MBE) is used to grow advanced device structures for this purpose. MBE offers the potential to grow HgCdTe heterostructure layers on large silicon substrates leading to very large format and high performance IR focal plane array sin the future. Preliminary material and device properties achieved p+-v-n+ device structures grown on 3 inch oriented silicon wafers are discussed.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Silviu Velicu, Renganathan Ashokan, Christoph H. Grein, Sivalingam Sivananthan, Paul Boieriu, and Don Rafol "High-temperature HgCdTe/CdTe/Si infrared photon detectors by MBE", Proc. SPIE 4454, Materials for Infrared Detectors, (12 November 2001); https://doi.org/10.1117/12.448173
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
Back to Top