Low-energy ion implantation-induced control of InP-based heterostructure properties

Vincent Aimez; Jacques Beauvais; Dominique Drouin; Jean Beerens; Denis Morris; Serge Jandl

doi:10.1117/12.452544

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27 December 2001 Low-energy ion implantation-induced control of InP-based heterostructure properties

Vincent Aimez, Jacques Beauvais, Dominique Drouin, Jean Beerens, Denis Morris, Serge Jandl

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Proceedings Volume 4468, Engineering Thin Films with Ion Beams, Nanoscale Diagnostics, and Molecular Manufacturing; (2001) https://doi.org/10.1117/12.452544
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

In this paper we show that low energy ion implantation of InP based heterostructures for quantum well intermixing is a promising technique for photonic integrated devices. In order to fabricate complex optoelectronic devices with a spatial control of the bandgap profile of the heterostructure, there is a list of requirements that have to be fulfilled. We have fabricated high quality discrete blueshifted laser diodes to verify the capability of low energy ion implantation induced intermixing for integration. We also adapted this intermixing process to specific heterostructures in order to obtain submicrometer bandgap tuning spatial control.

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Vincent Aimez, Jacques Beauvais, Dominique Drouin, Jean Beerens, Denis Morris, and Serge Jandl "Low-energy ion implantation-induced control of InP-based heterostructure properties", Proc. SPIE 4468, Engineering Thin Films with Ion Beams, Nanoscale Diagnostics, and Molecular Manufacturing, (27 December 2001); https://doi.org/10.1117/12.452544

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