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27 December 2001 Low-energy ion implantation-induced control of InP-based heterostructure properties
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In this paper we show that low energy ion implantation of InP based heterostructures for quantum well intermixing is a promising technique for photonic integrated devices. In order to fabricate complex optoelectronic devices with a spatial control of the bandgap profile of the heterostructure, there is a list of requirements that have to be fulfilled. We have fabricated high quality discrete blueshifted laser diodes to verify the capability of low energy ion implantation induced intermixing for integration. We also adapted this intermixing process to specific heterostructures in order to obtain submicrometer bandgap tuning spatial control.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vincent Aimez, Jacques Beauvais, Dominique Drouin, Jean Beerens, Denis Morris, and Serge Jandl "Low-energy ion implantation-induced control of InP-based heterostructure properties", Proc. SPIE 4468, Engineering Thin Films with Ion Beams, Nanoscale Diagnostics, and Molecular Manufacturing, (27 December 2001);

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