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12 December 2001 Structure, thermal stability, and reflectivity of Sc/Si and Sc/W/Si/W multilayer x-ray mirrors
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Abstract
Processes going on at elevated temperatures between Sc and Si layers in Sc/Si coatings are studied by X-ray scattering and cross-sectional transmission electron microscopy. It is shown that the W layers of 0.5-0.8 nm placed at Sc-Si interfaces form effective barriers preventing the penetration of Si into Sc. The effects of Si-Sc diffusion and W-barriers on the reflectivity of coatings are calculated in good agreement with experimental results. Presented measurements show that the Sc/W/Si/W multilayers with the period of 20.5 nm fabricated by dc-magnetron sputtering possess thermal stability up to 250 C and the normal incidence reflectivity of 24% at wavelengths about 40 nm.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander V. Vinogradov, Yurii P. Pershin, Eugeniy Zubaryev, Dmitrii L. Voronov, Oleg Penkov, Valerii V. Kondratenko, Yurii A. Uspenskii, Igor A. Artioukov, and John F. Seely "Structure, thermal stability, and reflectivity of Sc/Si and Sc/W/Si/W multilayer x-ray mirrors", Proc. SPIE 4505, Soft X-Ray Lasers and Applications IV, (12 December 2001); https://doi.org/10.1117/12.450595
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