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18 December 2001 Tellurium antisites in CdZnTe
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The n-type conduction of CdTe and Cd0.96Zn0.04Te crystals grown from melts with excess tellurium indicates that the origin of the donors with an energy level at 0.01 eV below the conduction band are most likely singly ionized tellurium antisites instead of cadmium interstitials. Based on this model, the deep level at 0.75 eV below the conduction band is therefore doubly ionized tellurium antisites. After increasing the zinc content over 7%, CdZnTe turns to p-type. The conduction type variation of CdZnTe crystals as a function of zinc contents is explained by the compensation between the donors of Te-antisites and the acceptors of Cd vacancies. High resitivity Cd0.9Zn0.1Te crystals are produced by compensating the p-type crystals with indium at a low doping level of 1- 5x1015 cm-3. At room temperature, the high yield CdZnTe radiation detectors can resolve the six low energy peaks from the Am241 source, a performance comparable to the best reported CdZnTe detectors.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Muren Chu, Sevag Terterian, David Ting, Ralph B. James, Jay Chris Erickson, H. Walter Yao, Terrance Thiem Lam, Marek Szawlowski, and Richard W. Szczebiot "Tellurium antisites in CdZnTe", Proc. SPIE 4507, Hard X-Ray and Gamma-Ray Detector Physics III, (18 December 2001);

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