Avalanching silicon drift photodetector (A+SDP)

Gintas Vilkelis; Bradley E. Patt; Jan S. Iwanczyk; Lawrence R. MacDonald; Carolyn R. Tull

doi:10.1117/12.450778

19 December 2001 Avalanching silicon drift photodetector (A+SDP)

Gintas Vilkelis, Bradley E. Patt, Jan S. Iwanczyk, Lawrence R. MacDonald, Carolyn R. Tull

Proceedings Volume 4508, Penetrating Radiation Systems and Applications III; (2001) https://doi.org/10.1117/12.450778
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

The performance of solid-state photodetectors is limited by noise due to their capacitance and leakage current. A new type of photodetector is being investigated, which contains a micro-avalanche multiplication gain stage incorporated into the small anode structure of a silicon drift photodetector (SDP). This technology is expected to result in improved performance over large area avalanche photodiodes (APD's) because of the very small region of multiplication in the new A+SDP versus multiplication over the entire active area for APD's. APD reliability has generally deteriorated as a function of the size of the devices being manufactured. The A+SDP will be markedly better than PIN diodes because of both the low capacitance and the avalanche multiplication. The device also promises to be better than standard large area Silicon Drift Photodetectors (SDP's) by mitigating the remaining noise due to the leakage current that dominates the performance of these devices at room temperature. Large area SDP's require cooling to well below 0 degree(s)C to obtain satisfactory leakage current-related noise. Physical device simulation tools were used to model the dopant concentrations, E-field magnitude and potential distributions. A+SDP's could have practical application in scintillation detectors for gamma ray spectroscopy as well as PMT replacements in nuclear medicine.

Citation Download Citation

Gintas Vilkelis, Bradley E. Patt, Jan S. Iwanczyk, Lawrence R. MacDonald, and Carolyn R. Tull "Avalanching silicon drift photodetector (A+SDP)", Proc. SPIE 4508, Penetrating Radiation Systems and Applications III, (19 December 2001); https://doi.org/10.1117/12.450778

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