Paper
8 November 2001 Multimode lasing at room temperature from InGaAs/GaAs quantum dot lasers
Author Affiliations +
Proceedings Volume 4533, Semiconductor Lasers for Lightwave Communication Systems; (2001) https://doi.org/10.1117/12.447768
Event: ITCom 2001: International Symposium on the Convergence of IT and Communications, 2001, Denver, CO, United States
Abstract
We demonstrate InGaAs/GaAs quantum dot lasers with multimode lasing at room temperature immediately above threshold. The lasing modes are separated by about ten times the Fabry-Perot mode spacing, with several dark modes in between the lasing modes. Rate equation simulations indicate that this multimode behavior can be explained by a homogeneous broadening that is on the order of the mode spacing.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Benjamin Klein, Kevin L. Silverman, and Richard P. Mirin "Multimode lasing at room temperature from InGaAs/GaAs quantum dot lasers", Proc. SPIE 4533, Semiconductor Lasers for Lightwave Communication Systems, (8 November 2001); https://doi.org/10.1117/12.447768
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Cited by 1 scholarly publication and 2 patents.
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KEYWORDS
Quantum dots

Picosecond phenomena

Optical simulations

Quantum dot lasers

Laser damage threshold

Photons

Fabry–Perot interferometers

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