Gold damascene interconnect technology for millimeter-wave photonics on silicon

Hiromu Ishii; Shouji Yagi; Tadashi Minotani; Yakov Royter; Kazuhisa Kudou; Masaki Yano; Tadao Nagatsuma; Katsuyuki Machida; Hakaru Kyuragi

doi:10.1117/12.442947

28 September 2001 Gold damascene interconnect technology for millimeter-wave photonics on silicon

Hiromu Ishii, Shouji Yagi, Tadashi Minotani, Yakov Royter, Kazuhisa Kudou, Masaki Yano, Tadao Nagatsuma, Katsuyuki Machida, Hakaru Kyuragi

Author Affiliations +

Proceedings Volume 4557, Micromachining and Microfabrication Process Technology VII; (2001) https://doi.org/10.1117/12.442947
Event: Micromachining and Microfabrication, 2001, San Francisco, CA, United States

Abstract

Thick-gold-multilevel damascene-interconnect technology makes it possible to fabricate >10-micrometers -feature ultrahigh-speed devices on Si. Adding H₂O₂ to a conventional KIO₃-based slurry triples the removal rate of gold in chemical mechanical polishing (CMP). A ratio of H₂O₂ to slurry of approximately 1:1 is found to be the optimum for obtaining the highest gold removal rate. X-ray photoelectron spectroscopy (XPS) analyses show that gold is oxidized in spite of its chemical stability when the removal rate is high. The gold is oxidized due to the reduction of iodine at the optimum H₂O₂ mixture ratio. This CMP of gold enabled us to make a thick (>10 micrometers ) gold-multilevel damascene-interconnection structure for the first time. Integration of full-wafer wafer-bonded uni-traveling carrier photodiodes (UTC-PDs) with the gold multilevel interconnections as coplanar waveguides (CPWs) on a Si wafer has been achieved using this gold-CMP process.

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Hiromu Ishii, Shouji Yagi, Tadashi Minotani, Yakov Royter, Kazuhisa Kudou, Masaki Yano, Tadao Nagatsuma, Katsuyuki Machida, and Hakaru Kyuragi "Gold damascene interconnect technology for millimeter-wave photonics on silicon", Proc. SPIE 4557, Micromachining and Microfabrication Process Technology VII, (28 September 2001); https://doi.org/10.1117/12.442947

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