Large-displacement microactuators in deep reactive ion-etched single-crystal silicon

Gabriel L. Smith; John M. Maloney; Lawrence Fan; Don L. DeVoe

doi:10.1117/12.443028

1 October 2001 Large-displacement microactuators in deep reactive ion-etched single-crystal silicon

Gabriel L. Smith, John M. Maloney, Lawrence Fan, Don L. DeVoe

Proceedings Volume 4559, MEMS Components and Applications for Industry, Automobiles, Aerospace, and Communication; (2001) https://doi.org/10.1117/12.443028
Event: Micromachining and Microfabrication, 2001, San Francisco, CA, United States

Abstract

A comparison of three different large-displacement microactuator technologies fabricated by deep reactive ion etching (DRIE) in silicon-on insulator (SOI) substrates is presented. Electrothermal, curved electrode electrostatic, and combdrive electrostatic actuator designs are considered, with each actuator design capable of producing more than 100 mm of displacement. Analytic models for each actuator type are reviewed, and both theoretical and experimental data for fabricated devices are analyzed and compared with respect to displacement, force, and power consumption.

Citation Download Citation

Gabriel L. Smith, John M. Maloney, Lawrence Fan, and Don L. DeVoe "Large-displacement microactuators in deep reactive ion-etched single-crystal silicon", Proc. SPIE 4559, MEMS Components and Applications for Industry, Automobiles, Aerospace, and Communication, (1 October 2001); https://doi.org/10.1117/12.443028

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