You have requested a machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Neither SPIE nor the owners and publishers of the content make, and they explicitly disclaim, any express or implied representations or warranties of any kind, including, without limitation, representations and warranties as to the functionality of the translation feature or the accuracy or completeness of the translations.
Translations are not retained in our system. Your use of this feature and the translations is subject to all use restrictions contained in the Terms and Conditions of Use of the SPIE website.
11 March 2002Comparison of 2D measurement methodologies and their viability in a manufacturing environment
As critical features continue to shrink, image fidelity on a wafer becomes even more important to the performance of an integrated circuit. There are several strategies that are typically employed to produce the best possible features. These include OPC, off-axis illumination and the ever-increasing numerical aperture, neglecting the pattern fidelity of the reticle. Several methodologies exist to characterize the fidelity of these features on both wafer and reticle. This paper will attempt to correlate the area measurements of contacts from a reticle using a scanning electron microscope, an automated visual inspection measurement system and an image based algorithm; and discuss their practical applications for manufacturing.
The alert did not successfully save. Please try again later.
Bryan S. Kasprowicz, Darren Taylor, Michael E Hathorn, "Comparison of 2D measurement methodologies and their viability in a manufacturing environment," Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); https://doi.org/10.1117/12.458367