Comparison of contact hole definition using laser and shaped e-beam mask writers and its influence on wafer level pattern fidelity

Brian Martin; Robert Lloyd; Gareth Davies; Graham G. Arthur

doi:10.1117/12.458330

11 March 2002 Comparison of contact hole definition using laser and shaped e-beam mask writers and its influence on wafer level pattern fidelity

Brian Martin, Robert Lloyd, Gareth Davies, Graham G. Arthur

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Proceedings Volume 4562, 21st Annual BACUS Symposium on Photomask Technology; (2002) https://doi.org/10.1117/12.458330
Event: Photomask 2001, 2001, Monterey, CA, United States

Abstract

Contact hole definition in the resist image is investigated as a function of reticle fidelity. It is found that for typical levels of corner rounding on reticle features, whether manufactured using a laser or shaped e-beam mask writer, the printed resist image at wafer level is largely unaffected. The loss of definition, which is also seen in supporting simulations using perfectly formed reticle features, is defined by the resolution limit of the resolution limit of the optical system of the stepper rather than the quality of the photomask.

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Brian Martin, Robert Lloyd, Gareth Davies, and Graham G. Arthur "Comparison of contact hole definition using laser and shaped e-beam mask writers and its influence on wafer level pattern fidelity", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); https://doi.org/10.1117/12.458330

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