Implementation and characterization of a DUV raster-scanned mask pattern generation system

Michael J. Bohan; Henry Chris Hamaker; Warren Montgomery

doi:10.1117/12.458301

11 March 2002 Implementation and characterization of a DUV raster-scanned mask pattern generation system

Michael J. Bohan, Henry Chris Hamaker, Warren Montgomery

Author Affiliations +

Proceedings Volume 4562, 21st Annual BACUS Symposium on Photomask Technology; (2002) https://doi.org/10.1117/12.458301
Event: Photomask 2001, 2001, Monterey, CA, United States

Abstract

Etec Systems, Inc., an Applied Materials company, has completed the implementation and characterization of a deep ultraviolet (DUV), multibeam, raster-scanned mask patterning and integrated process solution. The ALTA® 4000 mask pattern generation system integrates a new data path, environmental control system, DUV optics, a 257nm DUV continuous-wave laser source, and an environmentally stable chemically amplified resist (CAR) process to deliver superior productivity, improved resolution, and critical dimension (CD) control required for volume 130nm mask production. Additionally, to obtain the maximum benefit of this mask pattern generation system, Etec has completed development of an environmentally stable CAR process, which has been tailored to allow the maskmaking industry to continue to receive pre-coated mask blanks from commercial suppliers. This paper details the system architecture and presents system performance and characterization data. The characterization results of the integrated system and process solution are also presented. This integrated pattern generation and process solution continues the tradition of the production workhorse ALTA product line with the introduction of the ALTA 4000 scanned-laser mask pattern generation system.

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Michael J. Bohan, Henry Chris Hamaker, and Warren Montgomery "Implementation and characterization of a DUV raster-scanned mask pattern generation system", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); https://doi.org/10.1117/12.458301

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