Influence of e-beam-induced contamination on the printability of resist structures at 157-nm exposure

Christof M. Schilz; Klaus Eisner; Stefan Hien; Thomas Schleussner; Ralf Ludwig; Armin Semmler

doi:10.1117/12.458304

11 March 2002 Influence of e-beam-induced contamination on the printability of resist structures at 157-nm exposure

Christof M. Schilz, Klaus Eisner, Stefan Hien, Thomas Schleussner, Ralf Ludwig, Armin Semmler

Proceedings Volume 4562, 21st Annual BACUS Symposium on Photomask Technology; (2002) https://doi.org/10.1117/12.458304
Event: Photomask 2001, 2001, Monterey, CA, United States

Abstract

A CD-SEM was used to contaminate specific areas in dense line test structures on a 10x chrome on glass binary mask with e-beam induced deposition of hydrocarbons. Different degrees of contamination have been realised by varying the exposure time. Additionally, styrene was deposited with focussed ion beam (FIB) at different doses. The impact of the transmission loss caused by the deposited carbon was investigated by printing the manipulated test structures using Sematech's 157nm Exitech Micro Stepper and an experimental 157nm resist. Resist line width variations revealed the impact of the mask deposits on imaging. Additionally, simulations have been performed using 2D Kirchoff approximations in order to predict changes of the process windows and CD.

Citation Download Citation

Christof M. Schilz, Klaus Eisner, Stefan Hien, Thomas Schleussner, Ralf Ludwig, and Armin Semmler "Influence of e-beam-induced contamination on the printability of resist structures at 157-nm exposure", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); https://doi.org/10.1117/12.458304

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