New generation photomasks: 193-nm defect printability study

Linard Karklin; Paul van Adrichem; Frank A.J.M. Driessen; Stan Mazor

doi:10.1117/12.458315

11 March 2002 New generation photomasks: 193-nm defect printability study

Linard Karklin, Paul van Adrichem, Frank A.J.M. Driessen, Stan Mazor

Author Affiliations +

Proceedings Volume 4562, 21st Annual BACUS Symposium on Photomask Technology; (2002) https://doi.org/10.1117/12.458315
Event: Photomask 2001, 2001, Monterey, CA, United States

Abstract

Today some IC manufacturers obtain finer circuit geometries by adding scatter bars (SB) to conventional binary masks as an efficient resolution enhancement technique (RET).1 These SB perform best when they are wide. However, to achieve better resolution and wider process windows modern stepper equipments feature lower wavelengths and higher numerical aperture lenses. These new steppers require narrower scatter bars to prevent them from printing on the wafer, and their effectiveness as a RET is diminishing as we follow the stepper technology 'roadmap'.

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Linard Karklin, Paul van Adrichem, Frank A.J.M. Driessen, and Stan Mazor "New generation photomasks: 193-nm defect printability study", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); https://doi.org/10.1117/12.458315

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