PMJ01 panel discussion review: issues on mask technology for 100-nm lithography

Hiroyoshi Tanabe; Hisatake Sano

doi:10.1117/12.458306

11 March 2002 PMJ01 panel discussion review: issues on mask technology for 100-nm lithography

Hiroyoshi Tanabe, Hisatake Sano

Proceedings Volume 4562, 21st Annual BACUS Symposium on Photomask Technology; (2002) https://doi.org/10.1117/12.458306
Event: Photomask 2001, 2001, Monterey, CA, United States

Abstract

We discussed the following topics at the panel discussion of Photomask Japan 2001. 1) Lithography roadmap from 130-nm to 90-nm node. 2) Lithography tool selection, KrF, ArF, or F₂ for each node. 3) Mask technology issues for ArF and F₂ lithography. 4) CD control and MEEF reduction. 5) OPC and PSM applications. Panelists agreed that critical issues for 100-nm lithography are CD control, defect control and mask cost. Mask suppliers presented potential solutions for these issues: improvement of mask writing tools, refinement of resist process etc. By solving these issues 100-nm lithography can be realized by 2004.

Citation Download Citation

Hiroyoshi Tanabe and Hisatake Sano "PMJ01 panel discussion review: issues on mask technology for 100-nm lithography", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); https://doi.org/10.1117/12.458306

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