Paper
11 March 2002 Peformances of triple-tone contact hole mask for optical lithography extensions
Sang-Man Bae, Moon-Hee Lee, Sang-Chul Kim, Oscar Han
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Abstract
In this paper we suggest a promising strategy for optical lithography extension. In general the process margin of a contact hole is poorer than line and space patterning for the same feature size. An asymmetrical contact hole mask designed by simulations was fabricated and printed. Several techniques in designing this photomask have been considered. We have some difficulties in patterning device with design rule of below sub-half micrometer. And we have to overcome not only wafer pattern fidelity but also mask manufacturing process such as OPC pattern generation and defect inspection and repair. Attenuated triple-tone phase shifting masks with higher transmission and patterned opaque regions give better imaging performances with improved process margins. Therefore we suggest that a triple-tone mask is a possible solution for the optical lithography extension technology.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sang-Man Bae, Moon-Hee Lee, Sang-Chul Kim, and Oscar Han "Peformances of triple-tone contact hole mask for optical lithography extensions", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); https://doi.org/10.1117/12.458267
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KEYWORDS
Photomasks

Optical lithography

Optical proximity correction

Semiconducting wafers

Opacity

Defect inspection

Electron beam lithography

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