Use of nanomachining as a technique to reduce scrap of high-end photomasks

Roy White; Martin Verbeek; Ron Bozak; Marty Klos

doi:10.1117/12.458294

11 March 2002 Use of nanomachining as a technique to reduce scrap of high-end photomasks

Roy White, Martin Verbeek, Ron Bozak, Marty Klos

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Proceedings Volume 4562, 21st Annual BACUS Symposium on Photomask Technology; (2002) https://doi.org/10.1117/12.458294
Event: Photomask 2001, 2001, Monterey, CA, United States

Abstract

Nanomachining is a new technique to the semiconductor industry. This technique combines the positional control of an AFM and RAVE LLC's proprietary nanomachining head to perform material removal at nanometer levels. This is the first commercial application of this technology. Benefits of this technology as applied to photomask repair are discussed. Specifically, we address the use of this technique for removal of defects in quartz, chrome, MoSi, and various exotic materials. Emphasis is given to materials that provide significant challenges for the current industry standard repair techniques. Specifically, quartz bumps on alternating phase shift masks, trimming of carbon patches, and repairs within tight lines and spaces. Several advantages of the technique are illustrated, including the abilities to machine in tight geometries, approximate line edge slope for both wet and dry etched material, image with resolution exceeding today's needs, extend to future mask sizes and technologies NGL, develop custom repair processes and tips quickly, image and repair quartz bumps of nearly any size and shape, minimize surface damage, and achieve superior edge control and transmission. Statistical analysis is conducted on performance of the technique with respect to edge placement, transmission, and surface damage performance to specifications.

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Roy White, Martin Verbeek, Ron Bozak, and Marty Klos "Use of nanomachining as a technique to reduce scrap of high-end photomasks", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); https://doi.org/10.1117/12.458294

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