Paper
11 March 2002 Wavelength-dependent mask defect inspection and printing
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Abstract
In this paper we use simulations to establish the size of quartz defects we need to detect in alternating aperture phase shifting masks (altPSM) when imaged in high NA 248nm and 193nm 4X exposure systems. Such as those that will be used at the 130nm and 100nm technology nodes. Data will be presented showing that smaller defects in the center of the shifted space than at the edge of the space cause the allowable CD variation to be reached. It will be shown that the most sensitive position for a quartz defect in a shifted space is not at the edge or center of the space, but rather at a point between these two. We will then use advanced simulation techniques, that take into account the extra non-planar incident waves we must consider in 1X imaging, to establish how these defects are 'seen' by 1X actinic and non-actinic mask inspection systems. The relatively large effect upon the transmitted aerial image of a defect in an actinic inspection, especially for defects in the center of the shifted space, when compared to a non-actinic inspection will be shown.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin McCallum "Wavelength-dependent mask defect inspection and printing", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); https://doi.org/10.1117/12.458326
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KEYWORDS
Inspection

Critical dimension metrology

Imaging systems

Photomasks

Defect inspection

Printing

Quartz

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