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19 October 2001 850-nm implanted and oxide VCSELs in multigigabit data communication application
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Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444921
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China
Abstract
In this paper, we will present the results of the 850nm implanted and oxide-confined vertical cavity surface emitting lasers in multi-Gigabit application. In TrueLight, we have a lot of experience in manufacturing VCSEL with ion-implantation and wet-oxidation technologies for single device Gigabit data transmission application. The ion-implanted VCSEL is reliable with the Mean Time To Failure (MTTF) up to 108 hours at room temperature operation. For the gigabit Ethernet data communication, it provides a very promising solution in short haul application. In transmission experiment we demonstrated the devices could be modulated up to 2.5Gbps and 3.2Gbps data rate. For oxide-confined VCSEL devices, we use wet oxidation technology to approach the device processing and get very good result to achieve the mutli-gigabit data communication application in single device form. The VCSEL device with oxide aperture around 12um could be modulated up to 2.5Gbps and 3.2Gbps. A data of employing VCSEL in high data rate POF transmission is also presented.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jin-Shan Pan, Yung-Sen Lin, Chao-Fang Alice Li, Horng-Ching Lai, Chang-Cherng Wu, and Kai-Feng Huang "850-nm implanted and oxide VCSELs in multigigabit data communication application", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); https://doi.org/10.1117/12.444921
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