Characteristic study of InAs self-assembled quantum dots on GaAs/InP

Jingzhi Yin; Xinqiang Wang; Zongyou Yin; Zhengting Li; Mingtao Li; Yi Qu; Guotong Du; Shuren Yang

doi:10.1117/12.444993

19 October 2001 Characteristic study of InAs self-assembled quantum dots on GaAs/InP

Jingzhi Yin, Xinqiang Wang, Zongyou Yin, Zhengting Li, Mingtao Li, Yi Qu, Guotong Du, Shuren Yang

Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444993
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China

Abstract

In the paper, a thin tensile GaAs interlayer was used to get regular arrangement of InAs quantum dots (QDs) on InP substrate by LP-MOCVD. Photoluminescence (PL) spectrum, atomic force microscopy (AFM) image and Raman spectrum have been investigated. The five band k(DOT)p formalism in the PL spectrum and frequency shift in Raman spectrum have been performed. The theoretical calculations coincide with our experiment results well. The density of InAs quantum dots at 4 ML InAs is the maximum (1.6X10¹⁰cm^MIN2).

Citation Download Citation

Jingzhi Yin, Xinqiang Wang, Zongyou Yin, Zhengting Li, Mingtao Li, Yi Qu, Guotong Du, and Shuren Yang "Characteristic study of InAs self-assembled quantum dots on GaAs/InP", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); https://doi.org/10.1117/12.444993

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