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19 October 2001 III-V-semiconductor-based surface-micromachined catilevers for micro-opto-mechanical systems
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Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001)
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China
Surface micromachining processes based on III-V compound semiconductors are presented in this paper, in order to develop Micro-Opto-Electro-Mechanical systems (MOEMS). By fabricating micro cantilevers composed of seven InP/Air gap pairs, the major techniques of the surface micromachining are studied, including non-selective and selective etching, rinsing and drying. A severe problem of the sticking phenomena during rinsing and drying is avoided by the implementation of the Critical Point Drying (CPD) method.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jin Mao, Hua Tong, Dan Zhou, Zhensheng Jia, Jianhua Wang, and Shizhong Xie "III-V-semiconductor-based surface-micromachined catilevers for micro-opto-mechanical systems", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001);


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