Paper
19 October 2001 Influence of annealing on optical properties of ZnO film
Jinzhong Wang, Xinqiang Wang, Xiuying Jiang, Shuren Yang, Dingsan Gao, Guotong Du
Author Affiliations +
Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444949
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China
Abstract
No annealed, annealed after growth and annealed during growth ZnO films (denoted s1,s2, and s3 respectively) were grown on C-plane sapphire substrate by plasma-enhanced MOCVD and characterized by XRD and the optical transmission spectra. We could find that there is tensile strain in the c-plane of the films. Furthermore, the tensile strain increases after annealing. At the same time, the optical transmission indicates that the transmission of s2 in visible region is the highest and the value of s3 is the lowest.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jinzhong Wang, Xinqiang Wang, Xiuying Jiang, Shuren Yang, Dingsan Gao, and Guotong Du "Influence of annealing on optical properties of ZnO film", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); https://doi.org/10.1117/12.444949
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KEYWORDS
Zinc oxide

Annealing

Metalorganic chemical vapor deposition

Transmittance

Thin films

Sapphire

Crystals

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