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19 October 2001 Nonlinear optical effects in semiconductor optical amplifiers and their applications to all-optical switching
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Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444951
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China
Abstract
Gain saturation and the induced refractive index variation in semiconductor optical amplifiers (SOAs) have been widely used for many optoelectronics operations, including frequency conversion, phase conjugation, switching, modulation, and laser mode locking. In this paper, we report the experimental and numerical results of using gain saturation in SOAs for all-optical switching and novel laser mode locking configurations. For all-optical switching, we fabricated an all-SOA nonlinear optical loop mirror and implemented efficient power-dependent switching in both cw and pulse modes. Also, numerical modeling was also conducted to show consistent trends with experimental data. For novel laser mode-locking configurations, we demonstrated numerically efficient operation of mode-locked semiconductor laser with multi-mode interference SOA structures. With the nonlinear coupling process, it was found that efficient pulse compression could be achieved, implying that stable mode locking is feasible. Also, with a ring cavity colliding-pulse mode locking can be implemented.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chih Chung Yang, Yean-Woei Kiang, Jiun-Haw Lee, Jyh-Yang Wang, Horng-Shyang Chen, Chih-Wei Hsu, Jiann-Chang Lai, Ding-An Wang, and Chih-Chang Chen "Nonlinear optical effects in semiconductor optical amplifiers and their applications to all-optical switching", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); https://doi.org/10.1117/12.444951
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