Paper
19 October 2001 Novel polarization-insensitive semiconductor optical amplifier structure with large 3dB bandwidth
Ruiying Zhang, Jie Dong, Fan Zhou, Hongliang Zhu, H. Y. Shu, J. Bian, L. F. Wang, H. L. Tian, Wei Wang
Author Affiliations +
Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444950
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China
Abstract
A novel approach to achieving a polarization-insensitive semiconductor optical amplifier is presented. The active layer consists of graded tensile strained bulk-like structure, which can not only enhance TM mode material gain and further realize polarization-insensitivity, but also get a large 3dB bandwidth due to different strain introduced into the active layer. 3dB bandwidth more than 40nm, 65nm has been obtained in the experiment and theory, respectively. The characteristics of such polarization insensitive structure have been analyzed. The influence of the amount of strain and of the thickness of strain layer on the polarization insensitivity has been discussed.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ruiying Zhang, Jie Dong, Fan Zhou, Hongliang Zhu, H. Y. Shu, J. Bian, L. F. Wang, H. L. Tian, and Wei Wang "Novel polarization-insensitive semiconductor optical amplifier structure with large 3dB bandwidth", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); https://doi.org/10.1117/12.444950
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KEYWORDS
Polarization

Semiconductor optical amplifiers

Electrons

Active optics

Etching

Crystals

Fast packet switching

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