Optical characterization of the Ge/Si (001) islands in multilayer structure

Changjun Huang; Yuhua Zuo; Cheng Li; Daizong Li; Buwen Cheng; Liping Luo; Jinzhong Yu; Qiming Wang

doi:10.1117/12.444962

19 October 2001 Optical characterization of the Ge/Si (001) islands in multilayer structure

Changjun Huang, Yuhua Zuo, Cheng Li, Daizong Li, Buwen Cheng, Liping Luo, Jinzhong Yu, Qiming Wang

Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444962
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China

Abstract

We show that the observed temperature dependence of the photoluminescence(PL) features can be consistently explained in terms of thermally activated carrier transfer processes in a multilayer structure of the self-organized Ge/Si(001) islands. The type II (electron confinement in Si) behavior of the Ge/Si islands is verified. With elevated temperature, the thermally activated electrons and holes enter the Ge islands from the Si and from the wetting layer (WL), respectively. An involvement of the type I (spatially direct) into type II (spatially indirect) recombination transition takes place at a high temperature.

Citation Download Citation

Changjun Huang, Yuhua Zuo, Cheng Li, Daizong Li, Buwen Cheng, Liping Luo, Jinzhong Yu, and Qiming Wang "Optical characterization of the Ge/Si (001) islands in multilayer structure", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); https://doi.org/10.1117/12.444962

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