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19 October 2001 Transient responding characteristics of semiconductor bistable amplifier
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Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444939
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China
Abstract
In this paper we present the results of theoretical analysis and numerical analogue on the transient characteristics of a semiconductor system responding to the incident signal field, especially for the situations in which the system is with lasing effect and display a novel increasing absorption bistable state. The results appear some different features with that of other known bistable device and lasers. These results may be available to a class of excitonic bistable lasing systems.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tingwan Wu and Zhaosheng Zhu "Transient responding characteristics of semiconductor bistable amplifier", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); https://doi.org/10.1117/12.444939
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