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21 November 2001 Porous silicon as a sacrificial layer used in rf MEMS
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Abstract
This paper designs a process to prepare RF-MEMS using porous silicon (PS) as a sacrificial layer. The details of the process are discussed, such as the influences of H2SO4, H3PO4, and HF on the PS layer. KOH and TMAH solutions are used to remove the PS layer through small etching holes and to reduce the probability of the potential film damage, ethanol is used to dilute the KOH and TMAH solution. After the process, a suspended thin SiO2 film as large as 2x2mm2 is successfully achieved and the maximum lateral distance between the small etching holes is 540micrometers . Finally, two application examples are given.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peng Cong, Li-Tian Liu, and Yong Ding "Porous silicon as a sacrificial layer used in rf MEMS", Proc. SPIE 4592, Device and Process Technologies for MEMS and Microelectronics II, (21 November 2001); https://doi.org/10.1117/12.448993
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