Simple wet etching of GaN

Giacinta Parish; Paul A. Scali; Sue M.R. Spaargaren; Brett D. Nener

doi:10.1117/12.448955

21 November 2001 Simple wet etching of GaN

Giacinta Parish, Paul A. Scali, Sue M.R. Spaargaren, Brett D. Nener

Proceedings Volume 4592, Device and Process Technologies for MEMS and Microelectronics II; (2001) https://doi.org/10.1117/12.448955
Event: International Symposium on Microelectronics and MEMS, 2001, Adelaide, Australia

Abstract

We discuss investigations into a contactless UV-enhanced wet etching technique for GaN. The technique utilizes the oxidising agent potassium persulfate to consume photogenerated electrons, thus avoiding the need for an electrical contact to an external cathode. The etch rate is strongly dependent on illumination intensity and uniformity and on the pH of the KOH solution, as is the roughness of the etched surface. The implementation of a dual illumination scheme whereby an additional UVC lamp was used to illuminate only the solution and not the wafer, resulted in an increased etch rate and smoother etched surface. Finally, the ohmic nature of contacts deposited on n-type GaN that had been etched in this manner was found to be improved compared to contacts on the unetched surface.

Citation Download Citation

Giacinta Parish, Paul A. Scali, Sue M.R. Spaargaren, and Brett D. Nener "Simple wet etching of GaN", Proc. SPIE 4592, Device and Process Technologies for MEMS and Microelectronics II, (21 November 2001); https://doi.org/10.1117/12.448955

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