Graded doping in active layer for achievement of high brightness and efficiency organic light-emitting devices

WenBao Gao; Kaixia Yang; Hongyu Liu; Jing Feng; Jingying Hou; Shiyong Liu

doi:10.1117/12.446568

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29 October 2001 Graded doping in active layer for achievement of high brightness and efficiency organic light-emitting devices

WenBao Gao, Kaixia Yang, Hongyu Liu, Jing Feng, Jingying Hou, Shiyong Liu

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Proceedings Volume 4594, Design, Fabrication, and Characterization of Photonic Devices II; (2001) https://doi.org/10.1117/12.446568
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore

Abstract

A graded doping technique was presented to fabricate high brightness and high efficiency OLEDs, in which a copper phthalocyanine(CuPc) film acts as buffer layer (alpha) -naphthylphenybiphenyl amine(NPB) film as hole-transport layer and a tris(8-hydroxyquinolinolate)aluminum(Alq3) film as the electron-transport layer.The luminescent layer consists of the mixture of NPB,Alq3 and an emitting dopant 5,6,11,12-petraphenylnaphthacene(Rubrene), where the concentration of NPB raised while the concentration of Alq3 was declined gradually in the deposition process. The graded doping device exhibited the maximum emission of 50000cd/m2 at 35v and the maximum efficiency of about 8cd/A at 9v, respectively, which have been improved by four times in comparison with the conventional doped devices.

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WenBao Gao, Kaixia Yang, Hongyu Liu, Jing Feng, Jingying Hou, and Shiyong Liu "Graded doping in active layer for achievement of high brightness and efficiency organic light-emitting devices", Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); https://doi.org/10.1117/12.446568

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