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29 October 2001 Graded doping in active layer for achievement of high brightness and efficiency organic light-emitting devices
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Proceedings Volume 4594, Design, Fabrication, and Characterization of Photonic Devices II; (2001) https://doi.org/10.1117/12.446568
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore
Abstract
A graded doping technique was presented to fabricate high brightness and high efficiency OLEDs, in which a copper phthalocyanine(CuPc) film acts as buffer layer (alpha) -naphthylphenybiphenyl amine(NPB) film as hole-transport layer and a tris(8-hydroxyquinolinolate)aluminum(Alq3) film as the electron-transport layer.The luminescent layer consists of the mixture of NPB,Alq3 and an emitting dopant 5,6,11,12-petraphenylnaphthacene(Rubrene), where the concentration of NPB raised while the concentration of Alq3 was declined gradually in the deposition process. The graded doping device exhibited the maximum emission of 50000cd/m2 at 35v and the maximum efficiency of about 8cd/A at 9v, respectively, which have been improved by four times in comparison with the conventional doped devices.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
WenBao Gao, Kaixia Yang, Hongyu Liu, Jing Feng, Jingying Hou, and Shiyong Liu "Graded doping in active layer for achievement of high brightness and efficiency organic light-emitting devices", Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); https://doi.org/10.1117/12.446568
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