Measurement of damage and damage profile in semiconductors using an optical modulation technique

Michael Gal

doi:10.1117/12.446538

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29 October 2001 Measurement of damage and damage profile in semiconductors using an optical modulation technique

Michael Gal

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Proceedings Volume 4594, Design, Fabrication, and Characterization of Photonic Devices II; (2001) https://doi.org/10.1117/12.446538
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore

Abstract

We review an optical technique which is capable of detecting damage in semiconductors in a broad range of defect densities, and can be used to determine the distribution of damage on and below the sample surface. Using this contactless, room temperature technique, which is based on differential reflectance spectroscopy, we have been able to generate relief maps that show the spatial distribution of damage in a number of III-V compounds and Si, as well as the depth profile of damage in ion-implanted semiconductors.

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Michael Gal "Measurement of damage and damage profile in semiconductors using an optical modulation technique", Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); https://doi.org/10.1117/12.446538

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