1/f noise in semiconductor heterostructure laser diodes

Jung Il Lee; Il Ki Han; Won Jun Choi; Jean Brini; Alain Chovet

doi:10.1117/12.444683

15 October 2001 1/f noise in semiconductor heterostructure laser diodes

Jung Il Lee, Il Ki Han, Won Jun Choi, Jean Brini, Alain Chovet

Proceedings Volume 4600, Advances in Microelectronic Device Technology; (2001) https://doi.org/10.1117/12.444683
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China

Abstract

A new model for electrical low frequency noise in semiconductor heterostructure laser diodes is developed based on number fluctuation theory. The model includes carrier number fluctuation mechanisms such as thermal activation, tunneling and random walk involving bulk traps and interface traps at the heterojunction interface. Noise sources in heterostructure semiconductor laser diodes can be divided into three parts, namely, series resistance including ohmic contacts, p-n junction and the heterojunction. The traps located at the interface and or at the bulk of the barrier layer can induce the modulation of barrier height which in turn results in the current fluctuation. Noise generation mechanisms for p-n junction is reviewed. Correlation between electrical and optical noise is also discussed.

Citation Download Citation

Jung Il Lee, Il Ki Han, Won Jun Choi, Jean Brini, and Alain Chovet "1/f noise in semiconductor heterostructure laser diodes", Proc. SPIE 4600, Advances in Microelectronic Device Technology, (15 October 2001); https://doi.org/10.1117/12.444683

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